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Samsung announces 40 NM Flash, predicts 20 NM devices

Posted By Brad On September 12, 2006 @ 1:38 pm In BESComputers.net | No Comments

Seoul (Korea) - There’s still room left for NAND Flash to scale. According to Samsung, the technology may shrink into 20 nm structures, down from the common 70 and 60 nm today. Samsung also presented the memory it will position to replace NOR Flash: Phase-change Random Access Memory (PRAM) promises a 30x increases in speed and 10 times the life spa

[1] read more | [2] digg story

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URL to article: http://blog.bescomputers.net/2006/09/12/samsung-announces-40-nm-flash-predicts-20-nm-devices/

URLs in this post:
[1] read more: http://www.tgdaily.com/2006/09/11/samsung_40nm_flash/
[2] digg story: http://digg.com/hardware/Samsung_announces_40_NM_Flash_predicts_20_NM_devices

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